Published October 18, 2013 | Version v1
Journal article

Interface effects on tunneling magnetoresistance in organic spintronics with flexible amine–Au links

  • 1. Institute of High Performance Computing, Agency for Science, Technology and Research (Singapore)

Description

Organic spintronics is a promising emerging field, but the sign of the tunneling magnetoresistance (TMR) is highly sensitive to interface effects, a crucial hindrance to applications. A key breakthrough in molecular electronics was the discovery of amine–Au link groups that give a reproducible conductance. Using first-principles calculations, we predict that amine–Au links give improved reproducibility in organic spintronics junctions with Au-covered Fe leads. The Au layers allow only states with sp character to tunnel into the molecule, and the flexibility of amine–Au links results in a narrow range of TMR for a fixed number of Au layers. Even as the Au thickness changes, the TMR remains positive as long as the number of Au layers is the same on both sides of the junction. Since the number of Au layers on Fe surfaces or Fe nanoparticles can now be experimentally controlled, amine–Au links provide a route towards robust TMR in organic spintronics. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/0957-4484/24/41/415201

Additional details

Publishing Information

Journal Title
Nanotechnology (Print)
Journal Volume
24
Journal Issue
41
Journal Page Range
[8 p.]
ISSN
0957-4484