Interface effects on tunneling magnetoresistance in organic spintronics with flexible amine–Au links
Creators
- 1. Institute of High Performance Computing, Agency for Science, Technology and Research (Singapore)
Description
Organic spintronics is a promising emerging field, but the sign of the tunneling magnetoresistance (TMR) is highly sensitive to interface effects, a crucial hindrance to applications. A key breakthrough in molecular electronics was the discovery of amine–Au link groups that give a reproducible conductance. Using first-principles calculations, we predict that amine–Au links give improved reproducibility in organic spintronics junctions with Au-covered Fe leads. The Au layers allow only states with sp character to tunnel into the molecule, and the flexibility of amine–Au links results in a narrow range of TMR for a fixed number of Au layers. Even as the Au thickness changes, the TMR remains positive as long as the number of Au layers is the same on both sides of the junction. Since the number of Au layers on Fe surfaces or Fe nanoparticles can now be experimentally controlled, amine–Au links provide a route towards robust TMR in organic spintronics. (paper)
Availability note (English)
Available from http://dx.doi.org/10.1088/0957-4484/24/41/415201Additional details
Identifiers
Publishing Information
- Journal Title
- Nanotechnology (Print)
- Journal Volume
- 24
- Journal Issue
- 41
- Journal Page Range
- [8 p.]
- ISSN
- 0957-4484
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 45007912
- Subject category
- S36: MATERIALS SCIENCE; S77: NANOSCIENCE AND NANOTECHNOLOGY;
- Descriptors DEI
- CONNECTORS; ELECTRIC CONTACTS; FLEXIBILITY; JUNCTION DETECTORS; LAYERS; MAGNETORESISTANCE; NANOSTRUCTURES; PARTICLES; SURFACES; THICKNESS; TUNNEL EFFECT; TUNNELS
- Descriptors DEC
- CONDUCTOR DEVICES; DIMENSIONS; ELECTRIC CONDUCTIVITY; ELECTRICAL EQUIPMENT; ELECTRICAL PROPERTIES; EQUIPMENT; MEASURING INSTRUMENTS; MECHANICAL PROPERTIES; PHYSICAL PROPERTIES; RADIATION DETECTORS; SEMICONDUCTOR DETECTORS; TENSILE PROPERTIES; UNDERGROUND FACILITIES