Published January 2010 | Version v1
Journal article

First-principles study of diffusion behaviour of point defects in the O-terminated (0001) surface in wurtzite ZnO

  • 1. Department of Physics, Tsinghua University, Beijing 100084 (China)
  • 2. Institute of Physics, Chinese Academy of Sciences, Beijing 100080 (China)

Description

A detailed first-principles study of the diffusion behaviour of point defects in the O-terminated (0001) surface in wurtzite ZnO was performed. The O vacancy and interstitial are found to diffuse much more easily in surface than in bulk. The Zn vacancy has a similar migration barrier for both bulk and surface, but has much smaller barrier for the diffuse-in process. The Zn interstitial is difficult to diffuse in the surface directly, but it can diffuse into the bulk relatively easily. Specific values of corresponding migration barriers are obtained. (atomic and molecular physics)

Availability note (English)

Available from http://dx.doi.org/10.1088/1674-1056/19/1/013101

Additional details

Publishing Information

Journal Title
Chinese Physics. B
Journal Volume
19
Journal Issue
1
Journal Page Range
[5 p.]
ISSN
1674-1056

INIS

Country of Publication
China
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
45007136
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
CUBIC LATTICES; DIFFUSION; INTERSTITIALS; SURFACES; VACANCIES; ZINC OXIDES
Descriptors DEC
CHALCOGENIDES; CRYSTAL DEFECTS; CRYSTAL LATTICES; CRYSTAL STRUCTURE; OXIDES; OXYGEN COMPOUNDS; POINT DEFECTS; ZINC COMPOUNDS