Published January 2010
| Version v1
Journal article
First-principles study of diffusion behaviour of point defects in the O-terminated (0001) surface in wurtzite ZnO
- 1. Department of Physics, Tsinghua University, Beijing 100084 (China)
- 2. Institute of Physics, Chinese Academy of Sciences, Beijing 100080 (China)
Description
A detailed first-principles study of the diffusion behaviour of point defects in the O-terminated (0001) surface in wurtzite ZnO was performed. The O vacancy and interstitial are found to diffuse much more easily in surface than in bulk. The Zn vacancy has a similar migration barrier for both bulk and surface, but has much smaller barrier for the diffuse-in process. The Zn interstitial is difficult to diffuse in the surface directly, but it can diffuse into the bulk relatively easily. Specific values of corresponding migration barriers are obtained. (atomic and molecular physics)
Availability note (English)
Available from http://dx.doi.org/10.1088/1674-1056/19/1/013101Additional details
Identifiers
Publishing Information
- Journal Title
- Chinese Physics. B
- Journal Volume
- 19
- Journal Issue
- 1
- Journal Page Range
- [5 p.]
- ISSN
- 1674-1056
INIS
- Country of Publication
- China
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 45007136
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- CUBIC LATTICES; DIFFUSION; INTERSTITIALS; SURFACES; VACANCIES; ZINC OXIDES
- Descriptors DEC
- CHALCOGENIDES; CRYSTAL DEFECTS; CRYSTAL LATTICES; CRYSTAL STRUCTURE; OXIDES; OXYGEN COMPOUNDS; POINT DEFECTS; ZINC COMPOUNDS