Methylammonium lead tribromide semiconductors: Ionizing radiation detection and electronic properties

The response of single crystal methylammonium lead tribromide (MAPbBr₃ or MAPB) semiconductors to alpha particles at low voltage is presented. Through analysis of the preamplifier traces induced by ²¹⁰Po alpha particles and collecting holes, we were able to determine the mobility–lifetime product, apparent mobility, trapping time constant, and the detrapping time constant. In addition, a quantitative study of the rate of positive polarization and device breakdown time at different applied voltages is presented. Finally, using a ²³⁹Pu/Be fast neutron source, we were able to demonstrate the response of MAPB to fast neutrons for the first time via benchmarking experiment with Monte Carlo simulations.