Published October 24, 2011
| Version v1
Journal article
Origin of instability by positive bias stress in amorphous Si-In-Zn-O thin film transistor
- 1. Department of Physics, University of Dongguk, Seoul 100-715 (Korea, Republic of)
- 2. Department of Semiconductor Engineering, Cheongju University, Cheongju, Chungbuk 360-764 (Korea, Republic of)
- 3. Future Convergence Research Division, Korea Institute of Science and Technology, Seoul 130-012 (Korea, Republic of)
- 4. School of Electrical Engineering, Kookmin University, Seoul 136-702 (Korea, Republic of)
Description
The origin of instability under positive bias stress (PBS) in amorphous Si-In-Zn-O (SIZO) thin film transistor (TFT) with different Si concentration has been investigated by x-ray photoelectron spectroscopy (XPS) and density of states (DOSs) analysis. It is found that stability of SIZO-TFT with 3 wt. % Si under PBS became more deteriorated than that of 1 wt. % Si incorporated SIZO-TFT due to the increased oxygen related trap distributed in energy range from conduction band to ∼0.3 eV below the conduction band. The origin of instability under PBS was discussed in terms of oxygen related trap derived from DOSs and XPS analysis.
Additional details
Identifiers
- DOI
- 10.1063/1.3657511;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 99
- Journal Issue
- 17
- Journal Page Range
- p. 172106-172106.3
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 43116054
- Subject category
- S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- AMORPHOUS STATE; ENERGY-LEVEL DENSITY; EV RANGE; INDIUM COMPOUNDS; INSTABILITY; OXYGEN; PHASE STABILITY; SEMICONDUCTOR MATERIALS; SILICON COMPOUNDS; STRESSES; THIN FILMS; TRANSISTORS; TRAPS; X-RAY PHOTOELECTRON SPECTROSCOPY; ZINC OXIDES
- Descriptors DEC
- CHALCOGENIDES; ELECTRON SPECTROSCOPY; ELEMENTS; ENERGY RANGE; FILMS; MATERIALS; NONMETALS; OXIDES; OXYGEN COMPOUNDS; PHOTOELECTRON SPECTROSCOPY; SEMICONDUCTOR DEVICES; SPECTROSCOPY; STABILITY; ZINC COMPOUNDS
Optional Information
- Notes
- (c) 2011 American Institute of Physics