Published February 2008 | Version v1
Journal article

Influence of Yttrium Ion-Implantation on the Growth Kinetics and Micro-Structure of NiO Oxide Film

  • 1. College of Mechanical Engineering, Yangzhou University, Yangzhou 225009 (China)
  • 2. College of Materials Engineering, National University of Antiuquia, Medellin 23715 (Colombia)

Description

Isothermal and cyclic oxidation behaviours of pure and yttrium-implanted nickel were studied at 1000 deg. C in air. Scanning electronic microscopy (SEM) and transmission electronic microscopy (TEM) were used to examine the micro-morphology and structure of oxide scales formed on the nickel substrate. It was found that Y-implantation significantly improved the anti-oxidation ability of nickel in both isothermal and cyclic oxidizing experiments. Laser Raman microscopy was also used to study the stress status of oxide scales formed on nickel with and without yttrium. The main reason for the improvement in anti-oxidation of nickel was that Y-implantation greatly reduced the growing speed and grain size of NiO. This fine-grained NiO oxide film might have better high temperature plasticity and could relieve parts of compressive stress by means of creeping, and maintained a ridge character and a relatively low internal stress level. Hence yttrium ion-implantation remarkably enhanced the adhesion of protective NiO oxide scale formed on the nickel substrate.

Availability note (English)

Available from http://dx.doi.org/10.1088/1009-0630/10/1/09

Additional details

Identifiers

Publishing Information

Journal Title
Plasma Science and Technology
Journal Volume
10
Journal Issue
1
Journal Page Range
p. 43-45
ISSN
1009-0630