Formation of dislocation patterns under irradiation

The interaction energy between point defects and dislocation patterns (such as the pile-up of dislocation loops and the dislocation wall) is derived. The bias for interstitial absorption by a dislocation in a pattern is shown to be lower than that of an isolated dislocation. The dislocation patterning is proposed to be driven by the dependence of dislocation bias on the dislocation arrangement. (orig.)