Published May 1, 1991
| Version v1
Journal article
Study of hydrogen interaction with SiO2/Si(100) system using positrons
- 1. Department of Physics, Brookhaven National Laboratory, Upton, New York, 11973. (USA)
Description
We describe positron annihilation studies of SiO2/Si(100) structures having 100-nm-thick oxide grown by plasma enhanced chemical vapor deposition. A normalized shape parameter is used to characterize the positron annihilation spectra. Activation and passivation of interface states by atomic hydrogen are demonstrated by repeated vacuum anneal and atomic hydrogen exposure. Hydrogen activation energy is derived for one of the samples as 2.02±0.07 eV
Additional details
Publishing Information
- Journal Title
- Journal of Applied Physics
- Journal Volume
- 69
- Journal Issue
- 9
- Series
- J. Appl. Phys.
- Journal Page Range
- 6603-6606
- ISSN
- 0021-8979
- CODEN
- JAPIA
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 22076341
- Subject category
- S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ACTIVATION ENERGY; ANNEALING; ANNIHILATION; ATOM TRANSPORT; BNL; CHEMICAL VAPOR DEPOSITION; HYDROGENATION; POSITRON CHANNELING; SILICON; SILICON OXIDES
- Descriptors DEC
- CHALCOGENIDES; CHANNELING; CHEMICAL COATING; CHEMICAL REACTIONS; DEPOSITION; ELEMENTS; ENERGY; HEAT TREATMENTS; INTERACTIONS; NATIONAL ORGANIZATIONS; NEUTRAL-PARTICLE TRANSPORT; OXIDES; OXYGEN COMPOUNDS; PARTICLE INTERACTIONS; RADIATION TRANSPORT; SEMIMETALS; SILICON COMPOUNDS; SURFACE COATING; US AEC; US DOE; US ERDA; US ORGANIZATIONS