Published December 1980
| Version v1
Report
Pulsed laser annealing of V3Si-single crystals and thin films
- 1. Tennessee Univ., Knoxville (USA)
- 2. Oak Ridge National Lab., TN (USA). Solid State Div.
Description
no abstract available
Additional details
Publishing Information
- Imprint Title
- Progress report of the Teilinstitut Nukleare Festkoerperphysik of the Institut fuer Angewandte Kernphysik from June 1st, 1979 to May 31st, 1980
- Imprint Pagination
- 173 p.
- Journal Page Range
- p. 109-110.
- Report number
- KFK--3051
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- Germany
- INIS RN
- 12617309
- Subject category
- S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Resource subtype / Literary indicator
- Numerical Data, No Abstract
- Descriptors DEI
- ANNEALING; BACKSCATTERING; EXPERIMENTAL DATA; FILMS; HELIUM IONS; ION IMPLANTATION; LASER RADIATION; MONOCRYSTALS; SILICON ALLOYS; SUPERCONDUCTIVITY; TRANSITION TEMPERATURE; VANADIUM ALLOYS
- Descriptors DEC
- ALLOYS; CHARGED PARTICLES; CRYSTALS; DATA; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; ELECTROMAGNETIC RADIATION; HEAT TREATMENTS; INFORMATION; IONS; NUMERICAL DATA; PHYSICAL PROPERTIES; RADIATIONS; SCATTERING; THERMODYNAMIC PROPERTIES; TRANSITION ELEMENT ALLOYS
Optional Information
- Notes
- Published in summary form only.