Hydrogen-related deep levels in proton-bombarded silicon

Low-dose proton-and helium-implanted silicon was studied by deep-level transient spectroscopy. By comparing the spectra as well as the defect level concentration profiles, five electron traps and one hole trap (after proton implantation at room temperature) and one dominant electron trap (after proton implantation at 80 K) were identified to be hydrogen-related. Two of the hydrogen-related defect levels produced at room temperature represent different charge states of the same defect with a structure probably containing two hydrogen atoms. The electron trap produced by proton implantation at 80 K is a donor level located at about Esub(c) - 0.2 eV. The defect is tentatively identified as a vacancy-hydrogen complex or a hydrogen atom in a single interstitial site and anneals out before reaching room temperature. (author)