Published February 28, 1992
| Version v1
Journal article
Room temperature tunneling characteristics of ultra-small normal junctions
Creators
- 1. Dept. of Physics, Univ. of Utah, Salt Lake City, UT (United States)
Description
This paper reports on tunneling studies between a Scanning tunneling Microscope (STM)-controlled fine NbN tip and a NbN thin film that shows single electron tunneling characteristics at room temperature. The I-V curves display the Coulomb blockade and the Coulomb staircase caused by single electron charging of a series combination of two tunnel junctions. These room temperature observations indicate that it may be possible to operate single-electron-based devices in non-cryogenic regimes
Additional details
Publishing Information
- Journal Title
- Modern Physics Letters B
- Journal Volume
- 6
- Journal Issue
- 5
- Series
- Mod. Phys. Lett. B.
- Journal Page Range
- 273-280
- ISSN
- 0217-9849
- CODEN
- MPLBE
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 23074451
- Subject category
- S36: MATERIALS SCIENCE; S36: MATERIALS SCIENCE;
- Descriptors DEI
- COULOMB FIELD; ELECTRIC CONDUCTIVITY; NIOBIUM NITRIDES; SCANNING ELECTRON MICROSCOPY; TEMPERATURE RANGE 0273-0400 K; THIN FILMS; TUNNEL EFFECT
- Descriptors DEC
- ELECTRIC FIELDS; ELECTRICAL PROPERTIES; ELECTRON MICROSCOPY; FILMS; MICROSCOPY; NIOBIUM COMPOUNDS; NITRIDES; NITROGEN COMPOUNDS; PHYSICAL PROPERTIES; PNICTIDES; TEMPERATURE RANGE; TRANSITION ELEMENT COMPOUNDS