Published January 1989 | Version v1
Journal article Metadata-only

A freeman type ion source designed for ion implanter

Creators

  • 1. Academia Sinica, Shanghai, SH (China). Shanghai Inst. of Nuclear Research

Description

A Freeman type ion source designed for ion implanter is described. The ion source is simple, low consumption and cheap in price. After improving the structure of discharge chamber and extracting system, high quality para-axial ion beam of 0.5-1 mA can be obtained. Conventional two slits method is used for measurements of beam emittance. The energy normalized emittance is 2-4 x 10-5 mm · rad · MeV1/2 and normalized brightness ≥ 7.6 x 1010 A/cm2 · rad. This ion source is suitable for practical uses

Additional details

Publishing Information

Journal Title
Nuclear Techniques
Journal Volume
12
Journal Issue
1
Series
Nucl. Tech.
Journal Page Range
37-43
ISSN
0253-3219
CODEN
NUTED

INIS

Country of Publication
China
Country of Input or Organization
China
INIS RN
21041060
Subject category
S74: ATOMIC AND MOLECULAR PHYSICS;
Descriptors DEI
BEAM CURRENTS; BEAM EMITTANCE; BEAM EXTRACTION; BRIGHTNESS; FABRICATION; ION IMPLANTATION; ION SOURCES; IONIZATION CHAMBERS
Descriptors DEC
CURRENTS; MEASURING INSTRUMENTS; OPTICAL PROPERTIES; PHYSICAL PROPERTIES; RADIATION DETECTORS