Published 2001 | Version v1
Miscellaneous Metadata-only

Band structure and optical constants of InGaAsN alloys

Creators

  • 1. High Pressure Research Center ''Unipress'', Warsaw (Poland)
  • 2. National Renewable Energy Laboratory, Golden (United States)
  • 3. Institut fuer Halbleiterphysik, Johannes-Kepler-Universitaet, Linz (Austria)

Description

no abstract available

Part of:
Abstracts of 30. International School on Physics of Semiconducting Compounds Jaszowiec 2001

Additional details

Publishing Information

Imprint Title
Abstracts of 30. International School on Physics of Semiconducting Compounds Jaszowiec 2001
Imprint Pagination
146 p.
Journal Page Range
p. 27

Conference

Title
30. International School on Physics of Semiconducting Compounds Jaszowiec 2001
Dates
1-8 Jun 2001
Place
Ustron-Jaszowiec (Poland)

INIS

Country of Publication
Poland
Country of Input or Organization
Poland
INIS RN
33060099
Subject category
S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
No Abstract, Conference, Non-conventional Literature
Descriptors DEI
ABSORPTION SPECTRA; ARSENIDES; CHEMICAL COMPOSITION; CHEMICAL VAPOR DEPOSITION; ELECTRONIC STRUCTURE; ELLIPSOMETRY; ENERGY GAP; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; LATTICE PARAMETERS; LAYERS; NITRIDES; SEMICONDUCTOR MATERIALS
Descriptors DEC
ARSENIC COMPOUNDS; CHEMICAL COATING; DEPOSITION; MATERIALS; MEASURING METHODS; NITROGEN COMPOUNDS; PNICTIDES; SPECTRA; SURFACE COATING

Optional Information

Notes
4 refs