Published March 1982
| Version v1
Journal article
Kinetic study of the heterogeneous Si/H system under low-pressure plasma conditions by means of mass spectrometry
Description
The kinetics of the silicon/hydrogen low-pressure discharge system have been measured using a flow technique and mass spectrometry. Results show that at long residence times the system operates under a partial chemical equilibrium even though it is not at thermodynamic equilibrium. The present work indicates that the decisive parameter controlling the structural properties of the deposit (i.e., the formation of either amorphous or microcrystalline silicon) is the departure of the system from the partial chemical equilibrium
Additional details
Publishing Information
- Journal Title
- Plasma Chem. Plasma Process.
- Journal Volume
- 2
- Journal Issue
- 1
- Series
- Plasma Chem. Plasma Process.
- Journal Page Range
- 95-108
- ISSN
- 0272-4324
- CODEN
- PCPPD
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 18008561
- Subject category
- S36: MATERIALS SCIENCE; S37: INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY;
- Descriptors DEI
- CHEMICAL REACTION KINETICS; CURRENT DENSITY; DEUTERIUM COMPOUNDS; DISSOCIATION; EQUILIBRIUM; GLOW DISCHARGES; HETEROGENEOUS EFFECTS; HYDROGEN; IONIZATION; ISOTOPE EFFECTS; MASS SPECTRA; MONITORING; PLASMA; PLASMA ARC SPRAYING; SILANES; SILICON
- Descriptors DEC
- DEPOSITION; ELECTRIC DISCHARGES; ELEMENTS; HYDRIDES; HYDROGEN COMPOUNDS; KINETICS; NONMETALS; REACTION KINETICS; SEMIMETALS; SILICON COMPOUNDS; SPECTRA; SPRAY COATING; SURFACE COATING