Published December 2005
| Version v1
Journal article
Ion-channeling studies of InAs/GaAs quantum dots
Creators
- 1. Nuclear Science and Technology Development Center, National Tsing Hua University, Hsinchu 30043, Taiwan (China)
- 2. Department of Physics, National Tsing Hua University, Hsinchu 30043, Taiwan (China)
- 3. Department of Electronics Engineering, National Chiao Tung University, Hsinchu 30043, Taiwan (China)
Description
Determination of the strains in and around the quantum dots is important both to assess the results of the epitaxially grown thin film and to explain the optical performance of quantum dots samples. A series of InAs/GaAs quantum dots samples were fabricated by MBE in Stranski-Krastanov growth mode. The preliminary results of ion-channeling observations along <0 0 1> growth direction and <0 1 1> direction will be presented and discussed briefly
Additional details
Identifiers
- DOI
- 10.1016/j.nimb.2005.07.094;
- PII
- S0168-583X(05)01258-9;
Publishing Information
- Journal Title
- Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms
- Journal Volume
- 241
- Journal Issue
- 1-4
- Journal Page Range
- p. 470-474
- ISSN
- 0168-583X
- CODEN
- NIMBEU
Conference
- Title
- 18. international conference on the application of accelerators in research and industry
- Acronym
- CAARI 2004
- Dates
- 10-15 Oct 2004
- Place
- Fort Worth, TX (United States)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 37065818
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CRYSTAL GROWTH; GALLIUM ARSENIDES; INDIUM ARSENIDES; ION CHANNELING; MOLECULAR BEAM EPITAXY; QUANTUM DOTS; STRAINS; THIN FILMS
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; CHANNELING; CRYSTAL GROWTH METHODS; EPITAXY; FILMS; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; NANOSTRUCTURES; PNICTIDES
Optional Information
- Copyright
- Copyright (c) 2005 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.