Published 1990 | Version v1
Book

The role of oxygen in p-type InP

  • 1. AT and T Bell Lab., Murray Hill, NJ (USA)

Description

The authors have studied the influence of oxygen on the optical properties of Be implanted InP. Be implanted p-type InP without oxygen shows a strong deep photoluminescence (PL) band at 0.82 eV following anneal. As the oxygen concentration increases, the 0.82 eV PL-band disappears. They attribute the disappearance of this PL-band to the formation of oxygen complexes with the implantation induced defects. In epitaxial grown, nominally undoped InP a new PL-line is observed at ∼1.2 eV. The paramagnetic state of the phosphorus on indium PIn antisite is observed by optically detected magnetic resonance (ODMR) as a modulation of the photoluminescence in all Be implanted samples without oxygen. The antisite resonance is detected as a reduction of the 0.82 eV PL-band and the 1.2 eV PL-band. The observation of the Fe3+ resonance by ODMR spectroscopy is reported

Additional details

Publishing Information

Publisher
Materials Research Society.
Imprint Place
Pittsburgh, PA (USA)
ISBN
1-55899-051-8
Imprint Title
Impurities, defects and diffusion in semiconductors
Imprint Pagination
1050 p.
Journal Page Range
p. 151-156.

Conference

Title
Materials Research Society fall meeting.
Dates
27 Nov - 2 Dec 1989.
Place
Boston, MA (USA).

Optional Information

Secondary number(s)
CONF-891119--.