Published March 15, 1976 | Version v1
Journal article Metadata-only

The physical state of implanted tungsten in copper

Creators

  • 1. Bell Laboratories, Murray Hill, New Jersey 07974

Description

The physical state of W implanted in Cu has been studied by 4He+ ion channeling and transmission electron microscopy. At implant concentrations approximately-less-than 1 at.%, W is in solid solution but may form elemental bcc precipitates on annealing to approximately-greater-than 4500C. For implant concentrations of approx.10 at.%, a disordered layer of Cu and W is formed with the W occupying no regular lattice sites; on annealing W precipitates are formed with dimensions of a few hundred angstroms

Additional details

Identifiers

DOI
10.1063/1.88766;

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
28
Journal Issue
6
Series
Appl. Phys. Lett.
Journal Page Range
314-316
ISSN
0003-6951

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
7255231
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
ANNEALING; COPPER; DEPTH DOSE DISTRIBUTIONS; DOSE-RESPONSE RELATIONSHIPS; ELECTRON MICROSCOPY; ION CHANNELING; ION IMPLANTATION; KEV RANGE 10-100; PHYSICAL RADIATION EFFECTS; PRECIPITATION; SOLID SOLUTIONS; SOLUBILITY; TUNGSTEN IONS
Descriptors DEC
ATOMIC IONS; CHANNELING; CHARGED PARTICLES; DISPERSIONS; ELEMENTS; ENERGY RANGE; HEAT TREATMENTS; HOMOGENEOUS MIXTURES; IONS; KEV RANGE; METALS; MICROSCOPY; MIXTURES; RADIATION DOSE DISTRIBUTIONS; RADIATION EFFECTS; SEPARATION PROCESSES; SOLUTIONS; SPATIAL DOSE DISTRIBUTIONS; TRANSITION ELEMENTS

Optional Information

Notes
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