Published May 1991
| Version v1
Journal article
B and Ga ion implantation in Hg1-xCdxTe
Description
Implantations of B and Ga ions in p-type Hg0.78Cd0.22Te is discussed in this paper. The variations of electron carrier concentration with depth and sheet carrier concentration with dose are presented. A novel technique for producing n+-n-p structure in the case of B ion implantation is also outlined in this paper. (orig.)
Additional details
Publishing Information
- Journal Title
- Nuclear Instruments and Methods in Physics Research, Section B
- Journal Volume
- 58
- Journal Issue
- 1
- Series
- Nucl. Instrum. Methods Phys. Res., Sect. B.
- Journal Page Range
- 39-42
- ISSN
- 0168-583X
- CODEN
- NIMBE
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- Netherlands
- INIS RN
- 22074228
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE;
- Descriptors DEI
- ANGULAR DISTRIBUTION; BORON ADDITIONS; BORON IONS; CADMIUM TELLURIDES; DEPTH DOSE DISTRIBUTIONS; GALLIUM ADDITIONS; GALLIUM IONS; ION IMPLANTATION; KEV RANGE 100-1000; MERCURY TELLURIDES; P-TYPE CONDUCTORS; SEMICONDUCTOR MATERIALS
- Descriptors DEC
- CADMIUM COMPOUNDS; CHALCOGENIDES; CHARGED PARTICLES; DISTRIBUTION; ENERGY RANGE; IONS; KEV RANGE; MATERIALS; MERCURY COMPOUNDS; RADIATION DOSE DISTRIBUTIONS; SPATIAL DISTRIBUTION; SPATIAL DOSE DISTRIBUTIONS; TELLURIDES; TELLURIUM COMPOUNDS