Surface analysis of Xe ion implantated UO2

In this paper it was described on the results of Electron Probe Micro Analyis (EPMA), Rutherford Backscattering Spectroscopy(RBS) and X-ray Photo Spectroscopy(XPS) of sintered UO2 specimen and some kind of Mo-alloys after Xe ion implantation to investigate the beam damage phenomena of nuclear materials. All kinds of Xe implanted specimen showed the beam damaged structure and its degree was increased as the accelerating voltage and Xe ion concentration increased. Especially the UO2 specimen which was implanted at 100 keV, 5 x 1017 Xe ions/Cm2 was recrystallized to produce many sub grains in a grain. According to the result of RBS. it was found that the depth of implanted Xe of sintered UO2 specimen was 1500-1800Α and 1.2-2.9 at % of Xe was detected at that position. Also at all kind of Xe implanted specimen Xe peak was identified by XPS