InN quantum dots grown on GaN(0001) by molecular beam epitaxy

The growth properties of InN quantum dots on GaN (0001) surfaces by molecular beam epitaxy are being investigated. The dependence of the dimensions and density of the dots on the nucleation temperature and their evolution during growth at a constant substrate temperature are described. It is shown that both dimensions and density can be accurately controlled through nucleation temperature and deposition time. In the range from 400 C to 450 C, the formation of InN quantum dot structures of small dimensions and high density is feasible. InN dots with less than 3nm height, less than 22 nm diameter and with density higher than 1.7 x 1011 cm-2 have been obtained. Finally, vertical alignment of dots was observed for a multi-period InN quantum dot structure in GaN matrix, grown at 430 C. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)