Wurtzite InP formation during swift Xe-ion irradiation

Ion beam-induced amorphization and crystallization in InP implanted at room temperature with swift (250 and 340 MeV) Xe+ ions to doses of 5x1013 and 1x1014 cm-2, respectively, are investigated by transmission electron microscopy. For ion fluences above 5x1013 cm-2, amorphization is registered in the near-surface region as well as around the mean ion range. The amorphous layers produced due to electronic energy deposition in the near-surface region are found to have different short-range atomic structure as compared to those produced in the depth region of nuclear energy deposition. In the case of the highest ion fluence (1x1014 cm-2) a partial crystallization of the amorphous surface layer to polycrystalline InP is observed. The process of the crystallization passes a stage of wurtzite InP phase formation