The origin of ferromagnetism in Co-doped ZnO single crystalline films upon reducing annealings
- 1. Physics Department and Institute of Innovations and Advanced Studies (IIAS), National Cheng Kung University, 701 Tainan, Taiwan (China)
- 2. Department of Physics, Southeast University, Nanjing 210096 (China)
- 3. Jiangsu Provincial Laboratory for Nanotechnology, National Laboratory of Solid State Microstructure, and Department of Physics, Nanjing University, Nanjing 210093 (China)
Description
High-quality Zn0.95Co0.05O single crystalline films have been grown on a-plane sapphire substrates using molecular-beam epitaxy. The as-grown films show high resistivity and non-ferromagnetism at room temperature, and they become good conductive and ferromagnetic after annealing in Ar atmosphere or Ar(95%)/H2(5%) mixed-gas. Compared with weak ferromagnetism (0.16 μB/Co) in the Zn0.95Co0.05O film annealed in pure Ar atmosphere, the film annealed in the Ar/H2 mixed-gas shows much stronger ferromagnetism (0.82 μB/Co) at room temperature. For all of the samples, both of the X-ray diffraction and optical transmission spectrum analyses suggest the incorporation of Co2+ cations into wurtzite ZnO lattice. However, X-ray absorption studies based on synchronization radiation clearly indicate the presence of metallic Co clusters in the Zn0.95Co0.05O film upon thermal annealing in Ar/H2 mixed-gas. Our work demonstrates that minor ferromagnetic phases below the detection limit of conventional characterization techniques may exist in the transition-metal doped ZnO films, especially grown and/or annealed in the reducing atmosphere, and be responsible for the observed ferromagnetism.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.jallcom.2009.11.157Additional details
Identifiers
- DOI
- 10.1016/j.jallcom.2009.11.157;
- PII
- S0925-8388(09)02505-5;
Publishing Information
- Journal Title
- Journal of Alloys and Compounds
- Journal Volume
- 492
- Journal Issue
- 1-2
- Journal Page Range
- p. 31-34
- ISSN
- 0925-8388
- CODEN
- JALCEU
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 42028491
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ANNEALING; COBALT IONS; DOPED MATERIALS; ENERGY ABSORPTION; FERROMAGNETISM; FINE STRUCTURE; HYDROGEN; LIGHT TRANSMISSION; MAGNETIC SEMICONDUCTORS; MOLECULAR BEAM EPITAXY; MONOCRYSTALS; SAPPHIRE; SENSITIVITY; SPECTRA; TEMPERATURE RANGE 0273-0400 K; THIN FILMS; X RADIATION; X-RAY DIFFRACTION; ZINC OXIDES
- Descriptors DEC
- ABSORPTION; CHALCOGENIDES; CHARGED PARTICLES; COHERENT SCATTERING; CORUNDUM; CRYSTAL GROWTH METHODS; CRYSTALS; DIFFRACTION; ELECTROMAGNETIC RADIATION; ELEMENTS; EPITAXY; FILMS; HEAT TREATMENTS; IONIZING RADIATIONS; IONS; MAGNETISM; MATERIALS; MINERALS; NONMETALS; OXIDE MINERALS; OXIDES; OXYGEN COMPOUNDS; RADIATIONS; SCATTERING; SEMICONDUCTOR MATERIALS; SORPTION; TEMPERATURE RANGE; TRANSMISSION; ZINC COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2009 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.