Published July 2006 | Version v1
Journal article

Single crystal like thin films by selective ion-induced grain growth

  • 1. Laboratory of Nanometallurgy, Department of Materials, ETH Zurich, Wolfgang-Pauli-Str. 10, 8093 Zurich (Switzerland) and Max Planck Institute for Metals Research, Heisenbergstr. 3, 70569 Stuttgart (Germany)
  • 2. Centro Nacional de Investigaciones Metalurgicas (CENIM-CSIC), Avda. de Gregorio del Amo, 8, 28040 Madrid (Spain)

Description

The reliability of microelectronic devices is critically affected by the texture of the thin films. It has been demonstrated that ion bombardment during film growth, a process known as ion beam assisted deposition, is an effective tool for texture control. In particular, the use of two beams allows selection of both the in-plane and the out-of-plane texture. In this paper we show that post-deposition ion bombardment of strongly (1 1 1)-fiber textured Au films leads to the preferred growth of a single orientation, thus proving that single crystalline thin films can be fabricated without the use of molecular beam epitaxy technologies

Additional details

Identifiers

DOI
10.1016/j.scriptamat.2006.03.030;
PII
S1359-6462(06)00235-1;

Publishing Information

Journal Title
Scripta Materialia
Journal Volume
55
Journal Issue
1
Journal Page Range
p. 103-106
ISSN
1359-6462
CODEN
SCMAF7

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
38062145
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
CHANNELING; DEPOSITION; FIBERS; GRAIN GROWTH; ION BEAMS; MOLECULAR BEAM EPITAXY; MONOCRYSTALS; RELIABILITY; SPUTTERING; TEXTURE; THIN FILMS
Descriptors DEC
BEAMS; CRYSTAL GROWTH METHODS; CRYSTALS; EPITAXY; FILMS

Optional Information

Copyright
Copyright (c) 2006 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.