Published July 2006
| Version v1
Journal article
Single crystal like thin films by selective ion-induced grain growth
- 1. Laboratory of Nanometallurgy, Department of Materials, ETH Zurich, Wolfgang-Pauli-Str. 10, 8093 Zurich (Switzerland) and Max Planck Institute for Metals Research, Heisenbergstr. 3, 70569 Stuttgart (Germany)
- 2. Centro Nacional de Investigaciones Metalurgicas (CENIM-CSIC), Avda. de Gregorio del Amo, 8, 28040 Madrid (Spain)
Description
The reliability of microelectronic devices is critically affected by the texture of the thin films. It has been demonstrated that ion bombardment during film growth, a process known as ion beam assisted deposition, is an effective tool for texture control. In particular, the use of two beams allows selection of both the in-plane and the out-of-plane texture. In this paper we show that post-deposition ion bombardment of strongly (1 1 1)-fiber textured Au films leads to the preferred growth of a single orientation, thus proving that single crystalline thin films can be fabricated without the use of molecular beam epitaxy technologies
Additional details
Identifiers
- DOI
- 10.1016/j.scriptamat.2006.03.030;
- PII
- S1359-6462(06)00235-1;
Publishing Information
- Journal Title
- Scripta Materialia
- Journal Volume
- 55
- Journal Issue
- 1
- Journal Page Range
- p. 103-106
- ISSN
- 1359-6462
- CODEN
- SCMAF7
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 38062145
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- CHANNELING; DEPOSITION; FIBERS; GRAIN GROWTH; ION BEAMS; MOLECULAR BEAM EPITAXY; MONOCRYSTALS; RELIABILITY; SPUTTERING; TEXTURE; THIN FILMS
- Descriptors DEC
- BEAMS; CRYSTAL GROWTH METHODS; CRYSTALS; EPITAXY; FILMS
Optional Information
- Copyright
- Copyright (c) 2006 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.