Published October 7, 1981
| Version v1
Patent
Open
Improvements in or relating to semiconductors
Description
A method is described of producing a semiconductor by irradiating a diamond crystal with a flux of carbon ions of sufficient energy to penetrate the diamond and cause crystal growth, which is at least predominantly internal, while also bombarding the crystal with ions of a dopant which gives rise to semiconducting properties in the diamond. (U.K.)
Availability note (English)
MF available from INIS under the Report Number.Files
13670021.pdf
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Additional details
Publishing Information
- Imprint Pagination
- 5 p.
- IPC:
- Int. Cl. C01b31/06.
- IPC
- Int. Cl. C01b31/06.
- Patent number
- GB patent document 1599668/A/
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- United Kingdom
- INIS RN
- 13670021
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S07: ISOTOPES AND RADIATION SOURCES;
- Descriptors DEI
- CARBON IONS; CRYSTAL GROWTH; DIAMONDS; DOPED MATERIALS; FABRICATION; ION COLLISIONS; SEMICONDUCTOR MATERIALS
- Descriptors DEC
- ATOMIC IONS; CARBON; CHARGED PARTICLES; COLLISIONS; ELEMENTS; IONS; MINERALS; NONMETALS