Published July 17, 2006 | Version v1
Journal article Metadata-only

Metal-insulator transition and magnetic solitons in diluted magnetic semiconductors

Creators

  • 1. Department of Physics, Tokyo Gakugei University, Koganei-shi, Tokyo 184-8501 (Japan)

Description

The carrier-induced magnetic solitons in diluted magnetic semiconductors have been introduced by using the gauge-invariant effective Lagrangian. We have discussed the localization mechanism in the transport property by the random potentials due to the alloy potential fluctuations and long-range interactions

Additional details

Identifiers

DOI
10.1016/j.physleta.2006.02.040;
PII
S0375-9601(06)00306-9;

Publishing Information

Journal Title
Physics Letters. A
Journal Volume
355
Journal Issue
6
Journal Page Range
p. 460-464
ISSN
0375-9601
CODEN
PYLAAG

INIS

Country of Publication
Netherlands
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
38066974
Subject category
S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
Descriptors DEI
ALLOYS; CHARGE CARRIERS; FLUCTUATIONS; GAUGE INVARIANCE; INTERACTION RANGE; LAGRANGIAN FUNCTION; MAGNETIC SEMICONDUCTORS; METALS; POTENTIALS; RANDOMNESS; SOLITONS
Descriptors DEC
DISTANCE; ELEMENTS; FUNCTIONS; INVARIANCE PRINCIPLES; MATERIALS; QUASI PARTICLES; SEMICONDUCTOR MATERIALS; VARIATIONS

Optional Information

Copyright
Copyright (c) 2006 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.