Orientation dependence of acoustoelectric effect in the piezodielectric-semiconductor laminated structure

Considered is dependence of the value of acoustoelectric (AE) effect in a laminated piezo-dielectric-semiconductor structure on the direction of elastic surface wave propagation on the plane of piezo-dielectric under investigation. An expression for orientation dependence of AE of tension Vsub(AE) valid for any materials employed as laminated structure elements is obtained. It is shown that using this expression and measuring Vsub(AE) one may determine the coefficient of electromechanical binding to surface waves. Orientation dependences K2 are found for the quartz XY, YZ and XZ planes. The absolute values of K2 were being determined for separate directions in SiO2, LiNbO3, CdS and Bi12 GeO20 crystals. The method consisted in normalizing the value of Vsub(AE) measured for the XY quartz with respect to the theoretical value of k2 (0.28%) and in further determination for other directions and crystals according to this normalization. The results obtained are given in table, from which it may be seen that these results satisfactorily agree with the theoretical values available