Charge-carrier recombination in gallium arsenide with regions of defect accumulations

Effect of electric field of radiation-introduced defect accumulation regions (DAR) in gallium arsenide on charge carrier recombination is studied. It is shown that charge nonequilibrium secondary carrier concentration distribution as a function of Δpc(ψ) barrier potential manifests a strong deflection from a certain Boltzmann expression due to electric field effect. It is ascertained that the type of lifetime dependence τ on the excitation level δ correlates with the type of potential Δpc(ψ carrier concentration distribution function: 1)τ(δ) dependence is non-monotonous if Δpc(ψ) differs strongly from the Boltzmann expression; 2)τ ≅ const or τ is decreased with δ growth if Δpc(ψ) function coincides with the Boltzmann expression or is close to it