Published June 1998 | Version v1
Journal article

Spin-dependent tunneling in epitaxial systems: Band dependence of conductance

  • 1. Department of Physics, Tulane University, New Orleans, Louisiana70118 (United States)
  • 2. Oak Ridge National Laboratory, Oak Ridge, Tennessee37831-6114 (United States)

Description

We present first principles based calculations of the tunneling conductance between iron electrodes separated by semiconducting ZnSe. We assume that Fe (100) and ZnSe (100) atomic planes are epitaxed. We find that the conductance depends strongly on the relative alignment of the magnetic moments in the two Fe electrodes. The relative change in conductance increases dramatically as the thickness of the semiconductor increases. We show that this effect is due to the fact that electrons from a particular majority spin band are injected efficiently into the ZnSe from the Fe and also that electrons are ejected efficiently from the ZnSe into this band. Our calculations are based upon the Landauer endash Buettiker expression for the conductance which is expressed in terms of the transmission matrix elements. copyright 1998 American Institute of Physics

Additional details

Publishing Information

Journal Title
Journal of Applied Physics
Journal Volume
83
Journal Issue
11
Journal Page Range
p. 6521-6523
ISSN
0021-8979
CODEN
JAPIAU

Conference

Title
7. joint MMM-intermag conference
Dates
6-9 Jan 1998
Place
San Francisco, CA (United States)

INIS

Optional Information

Secondary number(s)
CONF-980102--