The electrical characteristics of Mg++P+ dually implanted semi-insulating InP

125 keV Mg+ and 160 keV P+ ions were implanted at RT, 100 and 200 deg C with doses ranging from 1x1014/cm2 to study the effect of dual implantations on the electrical characteristics of Fe doped InP. Samples were characterized by Electrochemical Capacitance-Voltage measurement and Rutherford Backscattering Spectroscopy-Channeling (RBS-C) technique. It has been found that Mg++P+ dual implantations in InP can result in an enhanced activation. The highest peak hole concentration and dopant activation are 1.1x1019/cm3 and 68 percent for Mg++P+ dual implants at doses of 1x1015/cm2 while that for Mg+ single implant at the same dose are 5.4x1018/cm3 and 40 percent respectively. A thin n type layer was found in the hole concentration profiles of Mg+ singly implanted samples while Mg++P+ dual implants could eliminate this phenomenon. RBS-C spectra showed that implantation at 100 deg C will lead to a small damage. A deep penetration of Mg into InP was also observed, and it can be suppressed to some extent by P+ co-implantation. (author). 15 refs.; 6 figs