Published August 1, 2007 | Version v1
Journal article

Ordered arrays of silicon pillars with controlled height and aspect ratio

  • 1. Department of Materials Science, MV Lomonosov Moscow State University, Lenin Hills, 119992 Moscow (Russian Federation)
  • 2. RWTH Aachen University, Institute of Inorganic Chemistry, Landoltweg 1, D-52074 Aachen (Germany)

Description

We report the fabrication of ordered arrays of silicon pillars via a combination of nanosphere lithography (NSL) and reactive ion etching (RIE). For NSL we used monolayers of silica particles self-assembled onto silicon substrates as masks for the deposition of hexagonal arrays of chromium nanoislands. By changing the amount of the deposited metal we fabricated arrays of nanoislands with different size and spacing. By using these arrays as masks for RIE, silicon pillars with different height (up to 1100 nm) and aspect ratio (up to 12:1) could be obtained

Additional details

Identifiers

DOI
10.1088/0957-4484/18/30/305307;
PII
S0957-4484(07)44382-3;

Publishing Information

Journal Title
Nanotechnology (Print)
Journal Volume
18
Journal Issue
30
Journal Page Range
p. 305307
ISSN
0957-4484

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
38088775
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
ASPECT RATIO; CHROMIUM; DEPOSITION; ETCHING; FABRICATION; IONS; MASKING; NANOSTRUCTURES; PARTICLES; SILICA; SILICON; SUBSTRATES
Descriptors DEC
CHARGED PARTICLES; DIMENSIONLESS NUMBERS; ELEMENTS; METALS; MINERALS; OXIDE MINERALS; SEMIMETALS; SURFACE FINISHING; TRANSITION ELEMENTS