Published August 1, 2007
| Version v1
Journal article
Ordered arrays of silicon pillars with controlled height and aspect ratio
- 1. Department of Materials Science, MV Lomonosov Moscow State University, Lenin Hills, 119992 Moscow (Russian Federation)
- 2. RWTH Aachen University, Institute of Inorganic Chemistry, Landoltweg 1, D-52074 Aachen (Germany)
Description
We report the fabrication of ordered arrays of silicon pillars via a combination of nanosphere lithography (NSL) and reactive ion etching (RIE). For NSL we used monolayers of silica particles self-assembled onto silicon substrates as masks for the deposition of hexagonal arrays of chromium nanoislands. By changing the amount of the deposited metal we fabricated arrays of nanoislands with different size and spacing. By using these arrays as masks for RIE, silicon pillars with different height (up to 1100 nm) and aspect ratio (up to 12:1) could be obtained
Additional details
Identifiers
- DOI
- 10.1088/0957-4484/18/30/305307;
- PII
- S0957-4484(07)44382-3;
Publishing Information
- Journal Title
- Nanotechnology (Print)
- Journal Volume
- 18
- Journal Issue
- 30
- Journal Page Range
- p. 305307
- ISSN
- 0957-4484
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 38088775
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ASPECT RATIO; CHROMIUM; DEPOSITION; ETCHING; FABRICATION; IONS; MASKING; NANOSTRUCTURES; PARTICLES; SILICA; SILICON; SUBSTRATES
- Descriptors DEC
- CHARGED PARTICLES; DIMENSIONLESS NUMBERS; ELEMENTS; METALS; MINERALS; OXIDE MINERALS; SEMIMETALS; SURFACE FINISHING; TRANSITION ELEMENTS