Published 1986 | Version v1
Book Metadata-only

Epitaxial growth of thin semiconductor films by pulsed laser evaporation: Damage and vaporization of CdTe, Cd and InSb targets induced with Nd:YAG laser

Creators

  • 1. Div. of Chemistry, National Research Council of Canada, Ottawa, Ontario, K1A 0R6

Description

The surface morphology of CdTe, Cd and InSb targets following vacuum pulsed laser evaporation has ben examined. Vaporization of CdTe does not change the stoichiometric conditions of the surface, but precipitation of In is observed in the case of InSb. A stable vaporization rate can be obtained with a scanning laser beam after an initial layer of material is removed from the target and a characteristic surface structure is formed

Additional details

Publishing Information

Publisher
Society of Photo-Optical Instrumentation Engineers.
Imprint Place
Bellingham, WA (USA)
Imprint Title
Laser processing: Fundamentals, applications, and systems engineering
Journal Page Range
p. 97-101.

Conference

Title
topics in optical and optoelectronic applied sciences and engineering.
Acronym
Society of Photo-Optical Instrumentation Engineers international symposium
Dates
2-6 Jun 1986.
Place
Quebec City (Canada).

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
18072647
Subject category
S36: MATERIALS SCIENCE; S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ANTIMONY ALLOYS; CADMIUM; CADMIUM TELLURIDES; CRYSTAL GROWTH; EPITAXY; EVAPORATION; FILMS; INDIUM ALLOYS; LASER RADIATION; LASER-RADIATION HEATING; NEODYMIUM LASERS; PRECIPITATION; PULSES; SEMICONDUCTOR MATERIALS; STABILITY; STOICHIOMETRY; SURFACE PROPERTIES
Descriptors DEC
ALLOYS; AMPLIFIERS; CADMIUM COMPOUNDS; CHALCOGENIDES; ELECTROMAGNETIC RADIATION; ELEMENTS; EQUIPMENT; HEATING; LASERS; MATERIALS; METALS; PHASE TRANSFORMATIONS; PLASMA HEATING; RADIATIONS; SEPARATION PROCESSES; SOLID STATE LASERS; TELLURIDES; TELLURIUM COMPOUNDS