Published October 10, 1989
| Version v1
Journal article
Generation of surface states on the Si-SiO2 interface under the influence of synchrotron radiation
- 1. AN SSSR, Novosibirsk. Inst. Yadernoj Fiziki
Description
A dose dependence analysis of the origin of surface states under the influence of synchrotron radiation has been performed. Quantity estimates of the exposure dose absorbed by the investigated samples, and also analysis of the surface states' relaxation process under thermal treatment have been done. It has been shown that short-time, low-temperature annealing restores the parameters of the samples to the initial level. (orig.)
Additional details
Publishing Information
- Journal Title
- Nuclear Instruments and Methods in Physics Research, Section A
- Journal Volume
- 282
- Journal Issue
- 2/3
- Series
- Nucl. Instrum. Methods Phys. Res., Sect. A.
- Journal Page Range
- 590-591
- ISSN
- 0168-9002
- CODEN
- NIMAE
Conference
- Title
- 8. international conference on synchrotron radiation utilization (SR-8).
- Dates
- 18-22 Aug 1988.
- Place
- Novosibirsk (USSR).
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- Netherlands
- INIS RN
- 21009996
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ANNEALING; HARD X RADIATION; PHYSICAL RADIATION EFFECTS; RADIATION DOSES; RELAXATION; SILICON; SILICON OXIDES; SOFT X RADIATION; SYNCHROTRON RADIATION
- Descriptors DEC
- BREMSSTRAHLUNG; CHALCOGENIDES; ELECTROMAGNETIC RADIATION; ELEMENTS; HEAT TREATMENTS; IONIZING RADIATIONS; OXIDES; OXYGEN COMPOUNDS; RADIATION EFFECTS; RADIATIONS; SEMIMETALS; SILICON COMPOUNDS; X RADIATION