Magnetic and electrical transport properties of Fe-doped Mn1.25Ga films deposited on different substrates

Highlights: • High (0 0 1) orientation in Mn_1.25GaFe_0.14 film was obtained. • The film has a large coercivity due to strain induced magnetic anisotropy. • (BH)_max can reach to 3.0 MGOe. • The total Hall resistivity is larger than that of L1₀-FePt thin film. L1₀-MnGa alloys have attracted intensive attention due to their great potential in the field of magnetic recording, permanent magnets and spintronic devices. Here we present the magnetic and electrical transport properties of Fe-doped L1₀-Mn_1.25Ga alloy films deposited on different substrates by magnetron sputtering. It is found that Fe-doped L1₀-Mn_1.25Ga films deposited on both SrTiO₃ and MgO substrates have high (0 0 1) orientation while the film deposited on MgO substrate has better magnetic property with larger magnetic anisotropy constant, coercivity, and a magnetic energy product of 3.0 MGOe, which is mainly due to strain arisen from the larger lattice mismatch. Moreover, the deposition temperature plays an important role in electrical transport properties of the films. The film deposited on SrTiO₃ substrate at 250 °C shows an ordinary Hall effect while anomalous Hall effect when the deposition temperature is 300, 400 and 500 °C.