Published September 15, 1984
| Version v1
Journal article
Improvement of detector fabrication by the planar process
Description
A planar process is described, which enables the fabrication of low noise high quality Si radiation detectors, by using ion implantation for doping and oxide passivation for reduction of the leakage current. Several technological problems are discussed associated with detector fabrication. Finally, the technical possibilities and economical limits are considered. (orig.)
Additional details
Publishing Information
- Journal Title
- Nucl. Instrum. Methods Phys. Res., Sect. A
- Journal Volume
- 226
- Journal Issue
- 1
- Series
- CODEN: NIMRD.;Nucl. Instrum. Methods Phys. Res., Sect. A.
- Journal Page Range
- 89-93
- ISSN
- 0167-5087
Conference
- Title
- New developments in silicon detectors.
- Acronym
- 2. European symposium on semiconductor detectors
- Dates
- 14-16 Nov 1983.
- Place
- Muenchen (Germany, F.R.).
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- Netherlands
- INIS RN
- 16014897
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- COST; CRYSTAL DOPING; FABRICATION; ION IMPLANTATION; LEAKAGE CURRENT; PASSIVATION; SI SEMICONDUCTOR DETECTORS; SILICON; SILICON OXIDES
- Descriptors DEC
- CHALCOGENIDES; CURRENTS; ELECTRIC CURRENTS; ELEMENTS; MEASURING INSTRUMENTS; OXIDES; OXYGEN COMPOUNDS; RADIATION DETECTORS; SEMICONDUCTOR DETECTORS; SEMIMETALS; SILICON COMPOUNDS