Published December 16, 1988 | Version v1
Journal article Metadata-only

High temperature metallisation for GaAs device processing

Creators

  • 1. University Coll., Cardiff (UK)
  • 2. Naval Research Lab., Washington, DC (USA)
  • 3. Royal Military Coll. of Science, Shrivenham (UK)

Description

A study is made of the thermal stability of a range of refractory metals and their silicides on GaAs. Particular emphasis is laid on the effects of transient annealing with temperatures up to 1050 0C. Using the technique of Rutherford backscattering the results for the metallisation systems Ta, W, TaSix, WSix, and VSix are compared and indicate the superior properties of the refractory silicides. (author)

Additional details

Publishing Information

Journal Title
Physica Status Solidi A
Journal Volume
110
Journal Issue
2
Series
Phys. Status Solidi A.
Journal Page Range
531-536
ISSN
0031-8965
CODEN
PSSAB

INIS

Country of Publication
Germany
Country of Input or Organization
German Democratic Republic
INIS RN
20038722
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
ANNEALING; DIFFUSION; FILMS; GALLIUM ARSENIDES; INTERFACES; RUTHERFORD SCATTERING; SEMICONDUCTOR DEVICES; STABILITY; SURFACE COATING; TANTALUM; TANTALUM SILICIDES; TEMPERATURE DEPENDENCE; TUNGSTEN; TUNGSTEN SILICIDES; VANADIUM SILICIDES; VERY HIGH TEMPERATURE
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; DEPOSITION; ELASTIC SCATTERING; ELEMENTS; GALLIUM COMPOUNDS; HEAT TREATMENTS; METALS; SCATTERING; SILICIDES; SILICON COMPOUNDS; TANTALUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS; TRANSITION ELEMENTS; TUNGSTEN COMPOUNDS; VANADIUM COMPOUNDS