Design, simulation, production and initial characterisation of 3D silicon detectors

3D detectors are photodiode radiation detectors with n- and p-type electrode columns passing through a silicon substrate. This structure makes it possible to achieve a very small electrode spacing without reducing the sensitive thickness. This greatly reduces the detector's depletion voltage and collection time, and hence improves its radiation hardness. This could make 3D detectors useful as pixel detectors for future high-luminosity colliders, such as the Super-LHC. The research institute IMB-CNM (Centro Nacional de Microelectronica, Barcelona) have produced 3D pad, pixel and strip detectors with a 'double-sided 3D' structure. This fabrication has been done alongside design and simulation work at the University of Glasgow. The first devices produced by CNM have been successfully IV and CV tested, and source tests are ongoing. Additionally, this conference record discusses work done by other 3D detector collaborations: Stanford, Manchester University and Sintef; FBK (Trento); and Glasgow, Diamond Light Source and IceMOS Ltd.