Growth of high-quality CuInSe2 polycrystalline films by magnetron sputtering and vacuum selenization

High-quality CuInSe2 thin films have been prepared using a two stages process. Cu and In were co-deposited onto glass substrates by magnetron sputtering method to produce a predominant Cu11In9 phase. The alloy films were selenised and annealed in vacuum at different temperature in the range of 200-500 degree C using elemental selenium in a closed graphite box. X-ray diffraction and scanning electron microscopy were used to characterize the films. It is found that the polycrystalline and single-phase CuInSe2 films were uniform and densely packed with a grain size of about 3.0 μm