Published September 1985
| Version v1
Journal article
Regularities of deposited layers formation of silicon reversive epitaxial structures
Description
Morphology and structural perfection of thick high alloy epitaxial silicon layers obtained in industrial conditions using trichlorosilane have been studied. Total regularities of structural formation of deposited layers are revealed. Practical recommendations directed to qualitative improvement of produced silicon reversive epitaxial structures have been worked out
Additional details
Additional titles
- Original title (Russian)
- Закономерности формирования осаждаемых слоев кремниевых обращенных эпитаксиальных структур
Publishing Information
- Journal Title
- Tsvetn. Met.
- Journal Issue
- no.9
- Series
- Tsvetn. Met.
- ISSN
- 0372-2929
- CODEN
- TVMTA
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- USSR
- INIS RN
- 17024405
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- CRYSTAL DEFECTS; EPITAXY; LAYERS; SEMICONDUCTOR JUNCTIONS; SILICON
- Descriptors DEC
- CRYSTAL STRUCTURE; ELEMENTS; SEMIMETALS
Optional Information
- Notes
- For English translation see the journal Soviet Journal of Non-Ferrous Metals (USA).