Temperature dependence of quantum lifetime in n-InGaAs/GaAs structures with double strongly coupled quantum wells

Longitudinal ρxx(B) and Hall ρxy(B) magnetoresistances have been investigated experimentally as a function of the in-plane and transverse magnetic fields in a n-InGaAs/GaAs structures with strongly-coupled double quantum wells in the temperature range T = 1.8-70 K and magnetic fields B = 0-9,0 T. The experimental data on temperature dependence of quantum lifetime in diffusive (kBT/τtr << 1) and ballistic (kBT/τtr >> 1) regimes are considered. It is found that for the ballistic regime temperatures, kBT/EF < 0.1, the observed quadratic temperature dependence of quantum lifetime is determined by inelastic electron-electron scattering. However, in the whole temperature range the temperature dependence of quantum lifetime is not described quantitatively by the existing theories.