Published February 2001
| Version v1
Journal article
X-ray emission induced by 60 keV high-flux copper negative-ion implantation
- 1. National Research Institute for Metals, Tsukuba, Ibaraki (Japan)
- 2. Institute of Plasma Physics, NSC KIPT, Kharkov (Ukraine)
Description
X-ray emission induced by high-flux 60 keV Cu negative ion implantation into silica glasses (a-SiO2) has been studied in the energy range of 0.6-20 keV. At low ion fluxes, the emission spectrum consists of a strong Cu(L) line at 0.95 keV only, without Cu(K) and Si(K) lines. The result is explained by the electron promotion through the quasi-molecule formation. With increasing ion flux, new peaks appear at 1.8, 2.5 and 3.2 keV. These peaks are ascribed to the sum-peak effect under high-flux implantation, Judging from the cross sections and the time dependence, the observed Cu(L) X-ray is concluded to be generated via Cu-O collisions. (author)
Additional details
Publishing Information
- Journal Title
- Japanese Journal of Applied Physics. Part 1, Regular Papers, Short Notes and Review Papers
- Journal Volume
- 40
- Journal Issue
- 2B
- Journal Page Range
- p. 1094-1096
- ISSN
- 0021-4922
INIS
- Country of Publication
- Japan
- Country of Input or Organization
- Japan
- INIS RN
- 32035766
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ANIONS; COPPER IONS; EMISSION SPECTRA; ION IMPLANTATION; KEV RANGE 10-100; PHOTON EMISSION; SILICA; X-RAY EMISSION ANALYSIS
- Descriptors DEC
- CHALCOGENIDES; CHARGED PARTICLES; CHEMICAL ANALYSIS; EMISSION; ENERGY RANGE; IONS; KEV RANGE; MINERALS; NONDESTRUCTIVE ANALYSIS; OXIDE MINERALS; OXIDES; OXYGEN COMPOUNDS; SILICON COMPOUNDS; SILICON OXIDES; SPECTRA
Optional Information
- Notes
- 8 refs., 5 figs., 1 tab.