Published October 8, 2012
| Version v1
Journal article
High quality ultrathin Bi2Se3 films on CaF2 and CaF2/Si by molecular beam epitaxy with a radio frequency cracker cell
Creators
- 1. Geballe Laboratory for Advanced Materials, Stanford University, Stanford, California 94305 (United States)
- 2. Department of Applied Physics, Stanford University, Stanford, California 94305 (United States)
- 3. Department of Physics, Stanford University, Stanford, California 94305 (United States)
- 4. School of Physics and Astronomy, Tel Aviv University, 69978 Tel Aviv (Israel)
Description
We report a method to fabricate high quality Bi2Se3 thin films using molecular beam epitaxy with a radio frequency cracker cell as an atomic selenium source. With Se-to-Bi ratios close to exact stoichiometry, optimal layer-by-layer growth of high quality Bi2Se3 thin films with smooth surfaces has been achieved on CaF2(111) substrates and Si(111) substrates with a thin epitaxial CaF2 buffer layer (CaF2/Si). Transport measurements show a characteristic weak-antilocalization magnetoresistance in all the films, with the emergence of a weak-localization contribution in the ultrathin film limit. Quantum oscillations, attributed to the topological surface states have been observed, including in films grown on CaF2/Si.
Additional details
Identifiers
- DOI
- 10.1063/1.4758466;
- arXiv
- arXiv:1205.5832v2;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 101
- Journal Issue
- 15
- Journal Page Range
- p. 153105-153105.4
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 44039278
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- BISMUTH SELENIDES; BUFFERS; CALCIUM FLUORIDES; LAYERS; MAGNETORESISTANCE; MOLECULAR BEAM EPITAXY; OSCILLATIONS; RADIOWAVE RADIATION; SILICON; STOICHIOMETRY; SUBSTRATES; SURFACES; THIN FILMS
- Descriptors DEC
- ALKALINE EARTH METAL COMPOUNDS; BISMUTH COMPOUNDS; CALCIUM COMPOUNDS; CALCIUM HALIDES; CHALCOGENIDES; CRYSTAL GROWTH METHODS; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; ELECTROMAGNETIC RADIATION; ELEMENTS; EPITAXY; FILMS; FLUORIDES; FLUORINE COMPOUNDS; HALIDES; HALOGEN COMPOUNDS; PHYSICAL PROPERTIES; RADIATIONS; SELENIDES; SELENIUM COMPOUNDS; SEMIMETALS
Optional Information
- Notes
- (c) 2012 American Institute of Physics