Published September 2015 | Version v1
Journal article Metadata-only

Recovery of PMOSFET NBTI under different conditions

Creators

  • 1. School of Mechano-electric Engineering, Xidian University, Xi'an 710071 (China)
  • 2. Key Laboratory of Wide Band-gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071 (China)
  • 3. School of Technical Physics, Xidian University, Xi'an 710071 (China)

Description

Negative bias temperature instability (NBTI) has become a serious reliability issue, and the interface traps and oxide charges play an important role in the degradation process. In this paper, we study the recovery of NBTI systemically under different conditions in the P-type metal–oxide–semiconductor field effect transistor (PMOSFET), explain the various recovery phenomena, and find the possible processes of the recovery. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/1674-1056/24/9/097304

Additional details

Identifiers

DOI
10.1088/1674-1056/24/9/097304;

Publishing Information

Journal Title
Chinese Physics. B
Journal Volume
24
Journal Issue
9
Journal Page Range
[5 p.]
ISSN
1674-1056

INIS

Country of Publication
China
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
47100709
Subject category
S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
Descriptors DEI
FIELD EFFECT TRANSISTORS; INSTABILITY; MATERIALS RECOVERY; METALS; OXIDES; RELIABILITY; TEMPERATURE DEPENDENCE
Descriptors DEC
CHALCOGENIDES; ELEMENTS; MANAGEMENT; OXYGEN COMPOUNDS; PROCESSING; SEMICONDUCTOR DEVICES; TRANSISTORS; WASTE MANAGEMENT; WASTE PROCESSING