High-sensitivity polarized light detector of 2D WS${}_2$/Mo${}_2$CF${}_2$ van der Waals heterostructure

The photogalvanic effect (PGE) generated under linearly polarized light irradiation has remarkable applications in 2D nanodevices. The PGE of 2D WS${}_2$/Mo${}_2$CF${}_2$ van der Waals (vdW) heterostructure can generate photocurrent and high sensitivity to polarized light. However, the PGE has less photogenerated current. On this basis, the photocurrent transport mechanism of PGE under low bias voltage is investigated. The results show that the photocurrent of the photon energy has cos${}^2$θ, sin${}^2$θ and sin2θ dependence on the polarization angle θ under the considered external bias voltage. Under a bias voltage of 1.0 V, the maximum photocurrent of 3.7 eV photon energy in the zigzag direction can reach 4.61. Under a bias voltage of 1 V, the maximum photocurrent of 1.8 eV photon energy in the armchair direction can reach 6.71. The maximum photocurrents are in the order of 10${}^{-1}$ for both zigzag and armchair directions with 0 V bias. Furthermore, 2D WS${}_2$/Mo${}_2$CF${}_2$ vdW heterostructure has a stable and high extinction ratio. These results show that 2D WS${}_2$/Mo${}_2$CF${}_2$ vdW heterostructure is a potential candidate material for future optoelectronics in the visible light region. (© 2023 Wiley‐VCH GmbH)