Published 1973
| Version v1
Journal article
Vibrational properties of ion implantation doped silicon
- 1. Paris-6 Univ., 75 (France). Lab. de Physique des Solides
Description
no abstract available
Additional details
Additional titles
- Original title (French)
- Proprietes vibratoires du silicium dope par implantation d'ions
Publishing Information
- Journal Title
- J. Phys. (Paris), Colloq.
- Journal Issue
- no.5
- Series
- J. Phys. (Paris), Colloq.
Conference
- Title
- Centenary Congress of the French Physical Society.
- Dates
- 28 May 1973.
- Place
- Vittel, France.
INIS
- Country of Publication
- France
- Country of Input or Organization
- France
- INIS RN
- 5118475
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- AMORPHOUS STATE; ARGON IONS; ARSENIC IONS; CRYSTAL DEFECTS; GALLIUM IONS; ION BEAMS; ION IMPLANTATION; KEV RANGE 10-100; PHOSPHORUS IONS; PHYSICAL RADIATION EFFECTS; RAMAN EFFECT; RECRYSTALLIZATION; SEMICONDUCTOR MATERIALS; SILICON; SILICON IONS
- Descriptors DEC
- BEAMS; CHARGED PARTICLES; CRYSTAL STRUCTURE; ELEMENTS; ENERGY RANGE; IONS; KEV RANGE; RADIATION EFFECTS; SEMIMETALS