On inversion mechanism of producing an inefficient layer (''window'') in silicon surface-barrier detectors

Thicknesses of inversion layers and electric field strengths in them have been calculated for silicon surface-barrier detectors (SBD) at different resistivities of the initial material and applied operating voltage biases. The results of calculations are compared with experimental data on the thicknesses of input ''windows'' (inefficient layer) of silicon detectors. A conclusion has been drawn that the possibility of identifying the inversion layer thickness with the thickness of the SBD input ''window'' cannot be thought to be proved