Published June 1997 | Version v1
Journal article Metadata-only

Anomalous distribution of iron atoms following the simultaneous implantation of Co+ and Fe+ ions in silicon

Creators

  • 1. E.K. Zavoiskii Kazan' Physicotechnical Institute, Russian Academy of Sciences, 420029 Kazan' (Russian Federation)

Description

An anomalous two-peaked depth profile of Fe atoms has been observed following the simultaneous implantation of Fe+ and Co+ ions in Si at low ion current densities (j≤10 μA/cm2) and a 1:3 ratio between iron and cobalt ions in the beam. Such a profile is formed on condition that the time of diffusion of the iron atoms to the sinks (the surfaces and the regions of linear defects in the bulk of the sample) is shorter than the effective time for silicide formation

Additional details

Publishing Information

Journal Title
Semiconductors
Journal Volume
31
Journal Issue
6
Journal Page Range
p. 615-617
ISSN
1063-7826
CODEN
SMICES

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
35046672
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Numerical Data, Translation
Descriptors DEI
COBALT IONS; CRYSTAL DEFECTS; CRYSTAL DOPING; DIFFUSION; EXPERIMENTAL DATA; ION IMPLANTATION; IRON; IRON IONS; PHYSICAL RADIATION EFFECTS; SILICON; TRACE AMOUNTS
Descriptors DEC
CHARGED PARTICLES; CRYSTAL STRUCTURE; DATA; ELEMENTS; INFORMATION; IONS; METALS; NUMERICAL DATA; RADIATION EFFECTS; SEMIMETALS; TRANSITION ELEMENTS

Optional Information

Notes
Translated from Fizika i Tekhnika Poluprovodnikov, ISSN 0015-3222, 31, 719-721 (June 1997); (c) 1997 American Institute of Physics.