Published 1992 | Version v1
Book

Progress in high-temperature superconducting transistors and other devices II; Proceedings of the Meeting, San Jose, CA, Sept. 12, 13, 1991

  • 1. Lausanne, Ecole Polytechnique Federale, (Switzerland)
  • 2. U.S. Navy, Naval Research Laboratory, Washington, DC (United States)
  • 3. Clemson University, SC (United States)

Description

The present conference on high-temperature superconducting transistors and related devices encompasses applications of superconducting thin films, the deposition, patterning, and characterization of thin films, superconducting digital technology, two- and three-terminal devices, and superconducting devices and programs. Specific issues addressed include the application of HTSC films in hybrid optoelectronic devices, the growth and control of epitaxial Ba2YCu3O(7-delta) thin films, atomic layer epitaxy of YBaCuO for optoelectronic applications, single-flux quantum logic, and all-YBaCu3O(7-x) edge-geometry weak links. Also addressed are inverted cylindrical magnetron sputtering for HTSC thin film growth, HTSC films for novel optronic devices, large-area ion-beam-sputtered YBA2Cu3O(7-delta) films for novel device structures, and the High-temperature Superconductivity Space Experiment

Additional details

Publishing Information

Publisher
Society of Photo-Optical Instrumentation Engineers (SPIE).
Imprint Place
Bellingham, WA (United States)
ISBN
0-8194-0728-3
Imprint Pagination
163 p.

Conference

Title
SPIE conference on progress in high-temperature superconducting transistors and other devices.
Dates
12-13 Sep 1991.
Place
San Jose, CA (United States).

Optional Information

Secondary number(s)
CONF-9109336--.