Published July 2017 | Version v1
Journal article

A wall shear stress sensor using a pair of sidewall doped cantilevers

  • 1. Information and Robot Technology Research Initiative, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo (Japan)
  • 2. Department of Mechano-Informatics, Graduate School of Information Science and Technology, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo (Japan)
  • 3. Faculty of Science and Engineering, Toyo University, 2100 Kujirai, Kawagoe-shi, Saitama (Japan)

Description

In this paper, we report on a micro-electro mechanical system (MEMS)-based piezoresistive sensor for measuring shear stress induced by an airflow. The advantages of the proposed sensor include a simple sensing method and a high resonance frequency due to the small size of the sensing elements. Our sensor consists of a pair of 3 µ m thick cantilevers with piezoresistors formed on the sidewall of their hinges to detect lateral deformation in the cantilevers induced by an airflow. Each cantilever has a 200 µ m  ×  400 µ m plate supported by two 150 µ m long, 4 µ m wide beams. The piezoresistors on the two cantilevers are designed to deform in opposite manners when a shear stress is applied and in the same manner when a pressure is applied. Therefore, the applied shear stress can be detected from the difference in the responses of the two cantilevers without becoming conflated with pressure. In this paper, the design, fabrication and evaluation of the proposed sensor are reported and compared to numerical simulation results. From the experimental results, the resolution of the sensor and its first resonance frequency are 1.3 Pa and 3.9 kHz, respectively. Moreover, we show that the effect of temperature on the readout of the sensor can be eliminated using a temperature-compensating piezoresistor fabricated on the same sensor chip. Finally, using the fabricated sensor, the measurement of the shear stress induced by an airflow with velocity between  −10 and 10 m s−1 is demonstrated. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/1361-6439/aa736e

Additional details

Identifiers

Publishing Information

Journal Title
Journal of Micromechanics and Microengineering. Structures, Devices and Systems
Journal Volume
27
Journal Issue
7
Journal Page Range
[8 p.]
ISSN
0960-1317
CODEN
JMMIEZ

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
49010698
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
COMPUTERIZED SIMULATION; DEFORMATION; DESIGN; DOPED MATERIALS; FABRICATION; KHZ RANGE 01-100; MEMS; READOUT SYSTEMS; RESOLUTION; RESONANCE; SENSORS; SHEAR; STRESSES; VELOCITY
Descriptors DEC
FREQUENCY RANGE; KHZ RANGE; MATERIALS; SIMULATION