Microstructure of α-alumina thin films deposited at low temperatures on chromia template layers

Radio frequency sputtering has been used to deposit α-alumina (α-Al2O3) thin films at substrate temperatures of 280-560 deg. C. The films are shown to be single phased and hard. Nanoindentation gives values of 306±31 and 27±3 GPa for elastic modulus and hardness, respectively, for a substrate temperature of 280 deg. C. Growth of the α phase was achieved by in situ predeposition of a chromia template layer. Chromia crystallizes in the same hexagonal structure as α-alumina, with a lattice mismatch of 4.1% in the a- and 4.6% in the c-parameter, and is shown to nucleate readily on the amorphous substrates (silicon with a natural oxide layer). This results in local epitaxy of α-alumina on the chromia layer, as is shown by transmission electron microscopy. The alumina grains are columnar with grain widths increasing from 22±7 to 41±9 nm, as the temperature increases from 280 to 560 deg. C. This is consistent with a surface diffusion dominated growth mode and suggests that α-alumina deposition at low temperatures is possible once initial grain nucleation has occurred. Results are also presented demonstrating chromia/α-alumina growth on a technological substrate (Haynes230 Ni-based super alloy, Haynes International, Inc.)