Spectroscopy of deep centers in amorphous silicon nitride

On the basis of the cathodoluminescence method and ellipsometry, the α-Si3N4 silicon nitride layers synthesized in reactors of the reduced and atmospheric pressure are investigated. Spectral-kinetic characteristics of cathodoluminescence in the silicon nitride layers of different types are studied. Specific features of changes in the luminescent characteristics of silicon nitride, obtained in the atmospheric-pressure reactor at high-temperature annealing are established. The interrelation is found between the luminescent characteristics of silicon nitrides of different types and deep centers responsible for the memory effect in these layers