Published November 1993
| Version v1
Journal article
Microstructural characterization of a silicon carbide whisker reinforced 2014 aluminum metal matrix composite
Description
Microstructural development in a powder metallurgy 2014 aluminum alloy -SiC whisker composite subject to controled and systematic aging treatments was investigated using analytical transmission electron microscopy and matrix microhardness measurements. In order to build a basis for comparison, the precipitation characteristics of the unreinforced matrix material with an identical processing history were also examined. The results indicate that the matrix of the composite material has a much greater density of dislocations than the control alloy. This high density of dislocations is due to the substantial difference on thermal expansion of Al matrix with respect to the SiC particles. (orig.)
Additional details
Publishing Information
- Journal Title
- Journal de Physique. 4
- Journal Volume
- 3
- Journal Issue
- 7,pt.3
- Journal Page Range
- p. 1741-1744.
- ISSN
- 1155-4339
- CODEN
- JPICEI
Conference
- Title
- 3. European conference on advanced materials and processes (EUROMAT-3).
- Original Conference Title
- 3. Conference Europeenne sur les Materiaux et les Procedes Avances
- Dates
- 08-10 Jun 1993.
- Place
- Paris (France).
INIS
- Country of Publication
- France
- Country of Input or Organization
- France
- INIS RN
- 25051621
- Subject category
- S36: MATERIALS SCIENCE; S36: MATERIALS SCIENCE; S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- AGING; ALUMINIUM BASE ALLOYS; CARBIDES; COMPOSITE MATERIALS; DISLOCATIONS; ELECTRON MICROSCOPY; MATRIX MATERIALS; MICROHARDNESS; MICROSTRUCTURE; POWDER METALLURGY; PRECIPITATION; REINFORCED MATERIALS; SILICON CARBIDES; TEMPERATURE RANGE 0400-1000 K; TIME DEPENDENCE; TRANSMISSION ELECTRON MICROSCOPY; WHISKERS
- Descriptors DEC
- ALLOYS; ALUMINIUM ALLOYS; CARBON COMPOUNDS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; CRYSTALS; HARDNESS; LINE DEFECTS; MATERIALS; MECHANICAL PROPERTIES; METALLURGY; MICROSCOPY; MONOCRYSTALS; SEPARATION PROCESSES; SILICON COMPOUNDS; TEMPERATURE RANGE